Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power
نویسندگان
چکیده
Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power Sherif A. Tawfik1 ∗ and Volkan Kursun2 1Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin, USA 2Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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ورودعنوان ژورنال:
- J. Low Power Electronics
دوره 5 شماره
صفحات -
تاریخ انتشار 2009